Few-layer MoS2 grown by chemical vapor deposition as a passive Q-switcher for tunable erbium-doped fiber lasers-中国Betway体育网页登陆

摘要 Wereportanerbium-dopedfiberlaserpassivelyQ-switchedbyafew-layermolybdenumdisulfide（MoS2）saturableabsorber（SA）.Thefew-layerMoS2isgrownbythechemicalvapordepositionmethodandtransferredontotheend-faceofafiberconnectortoformafiber-compatibleMoS2SA.Thelasercavityisconstructedbyusingathree-portopticalcirculatorandafiberBragggrating（FBG）asthetwoend-mirrors.StableQ-switchedpulsesareobtainedwithapulsedurationof1.92μsat1560.5nm.Byincreasingthepumppowerfrom42to204mW,thepulserepetitionratecanbewidelychangedfrom28.6to114.8kHz.PassiveQ-switchingoperationswithdiscretelasingwavelengthsrangingfrom1529.8to1570.1nmarealsoinvestigatedbyusingFBGswithdifferentcentralwavelengths.Thisworkdemonstratesthatfew-layerMoS2canserveasapromisingSAforwideband-tunableQ-switchinglaseroperation.

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Few-layer MoS2 grown by chemical vapor deposition as a passive Q-switcher for tunable erbium-doped fiber lasers

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