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Electronic and optical properties of single-layer MoS2

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DOI pd51p89gj7/1858095

作者 Hai-Ming Dong;San-Dong Guo;Yi-Feng Duan;Fei Huang;Wen Xu;Jin Zhang

机构地区不详

出处《物理学前沿：英文版》 2018年4期

关键词 MOS2 电子结构性质光吸收边基于密度电子气体

分类 [理学][物理]

出版日期 2018年04月14日（中国Betway体育网页登陆平台首次上网日期，不代表论文的发表时间）

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来源期刊

物理学前沿：英文版

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MOS2 电子结构性质光吸收边基于密度电子气体

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