摘要
Ni83Fe17filmswithathicknessofabout100nmweredepositedonthermaloxidizedsiliconsubstratesatambienttemperature,240,350,and410℃byDCmagnetronsputtering.Thedepositionratewasabout0.11nm/s.Theas-depositedfilmswereannealedat450,550,and650℃,respectively,inavacuumlowerthan3x10-3Pafor1h.TheNi83Fe17filmsmainlygrowwithacrystallineorientationof[111]inthedirectionofthefilmgrowth.Withtheannealingtemperatureincreasing,the[111]orientationenhances.Forfilmsdepositedatallfourdifferenttemperatures,thesignificantimprovementonanisotropicmagnetoresistanceoccursattheannealingtemperaturehigherthan550℃.Butforfilmsdepositedatambienttemperaturesand240℃,theanisotropicmagnetoresistancecanonlyrisetoabout1%after650℃annealing.Forfilmsdepositedat350℃and410℃,theanisotropicmagnetoresistancerisestoabout3.8%after650℃annealing.Theatomicforcemicroscopy(AFM)observationshowsasignificantincreaseingrainsizeofthefilmdepositedat350℃atter650℃annealing.Thedecreaseinresistivityandtheincreaseinanisotropicmagnetoresistancearecausedbythedecreaseinpointdefects,theincreaseingrainsize,andtheimprovementinlatticestructureintegrityofthefilms.
出版日期
2003年03月13日（中国Betway体育网页登陆平台首次上网日期，不代表论文的发表时间）
