Effect of top distributed Bragg reflectors on the performance of 650 nm AlGaInP resonant cavity light-emitting diodes-中国Betway体育网页登陆

摘要 Threekindsof650nmAlGaInPresonantcavitylight-emittingdiodes(RCLEDs)arefabricatedbymetalorganicchemicalvapordeposition(MOCVD)withdifferentnumbersofpairsoftopdistributedBraggreflectors(DBRs),whichare15,10and5,respectively.Bycomparingthefullwidthathalfmaximum(FWHM),lightpowerandtheangularfar-fieldemissionofthedevices,thedevicewith15pairsoftopDBRsshowsthebestperformance.ItsFWHMis13.4nmandthelightpoweris0.63mWatadrivingcurrentof30mA.

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Effect of top distributed Bragg reflectors on the performance of 650 nm AlGaInP resonant cavity light-emitting diodes

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