Annealing induced refinement on optical transmission and electrical resistivity of indium tin oxide-中国Betway体育网页登陆

摘要 Theeffectofannealingconditiononsputteredindiumtinoxide(ITO)filmsonquartzwiththethicknessof200nmischaracterizedtoshowenhancedopticaltransparencyandoptimizedelectricalcontactresistivity.Theas-depositedgrownITOfilmexhibitsonly65%and80%transmittanceat532and632.8nm,respectively.Afterannealingat475°Cfor15min,theITOfilmisrefinedtoshowimprovedtransmittanceatshorterwavelengthregion.Thetransmittancesof88.1%at532nmand90.4%at632.8nmcanbeobtained.The325-nmtransmittanceofthepost-annealedITOfilmisgreatlyincreasedfrom12.7%to41.9%.Optimizedelectricalpropertycanbeobtainedwhenannealingbelow450°C,leadingtoaminimumsheetresistanceof26Ω/square.SuchanITOfilmwithenhancedultraviolet(UV)transmittancehasbecomeanalternativecandidateforapplicationsincurrentUVphotonicdevices.Themorphologyandconductanceoftheas-depositedandannealedITOfilmsaredeterminedbyusinganatomicforcemicroscopy(AFM),showingagreatchangeontheuniformitydistributionwithfiniteimprovementonthesurfaceconductanceoftheITOfilmafterannealing.

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Annealing induced refinement on optical transmission and electrical resistivity of indium tin oxide

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