A NEW STRUCTURE AND ITS ANALYTICAL BREAKDOWN MODEL OF HIGH VOLTAGE SOI DEVICE WITH STEP UNMOVABLE SURFACE CHARGES OF BURIED OXIDE LAYER-中国Betway体育网页登陆

摘要 AnewSOI(SiliconOnInsulator)highvoltagedevicewithStepUnmovableSurfaceCharges(SUSC)ofburiedoxidelayeranditsanalyticalbreakdownmodelareproposedinthepaper.Theunmovablechargesareimplementedintotheuppersurfaceofburiedoxidelayertoincreasetheverticalelectricfieldanduniformthelateralone.The2-DPoisson'sequationissolvedtodemonstratethemodulationeffectoftheimmobileinterfacechargesandanalyzetheelectricfieldandbreakdownvoltagewiththevariousgeometricparametersandstepnumbers.AnewRESURF(REduceSURfaceField)conditionoftheSOIdeviceconsideringtheinterfacechargesandburiedoxideisderivedtomaximizebreakdownvoltage.Theanalyticalresultsareingoodagreementwiththenumericalanalysisobtainedbythe2-DsemiconductordevicessimulatorMEDICI.Asaresult,an1200Vbreakdownvoltageisfirstlyobtainedin3μm-thicktopSilayer,2μm-thickburiedoxidelayerand70μum-lengthdriftregionusingalineardopingprofileofunmovableburiedoxidecharges.

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A NEW STRUCTURE AND ITS ANALYTICAL BREAKDOWN MODEL OF HIGH VOLTAGE SOI DEVICE WITH STEP UNMOVABLE SURFACE CHARGES OF BURIED OXIDE LAYER

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