A new analytical model for the surface electric field distribution and breakdown voltage of the SOI trench LDMOS-中国Betway体育网页登陆

摘要 Anewanalyticalmodelforthesurfaceelectricfielddistributionandbreakdownvoltageofthesilicononinsulator(SOI)trenchlateraldouble-diffusedmetal-oxide-semiconductor(LDMOS)ispresented.Basedonthetwo-dimensionalLaplacesolutionandPoissonsolution,themodelconsiderstheinfluenceofstructureparameterssuchasthedopingconcentrationofthedriftregion,andthedepthandwidthofthetrenchonthesurfaceelectricfield.Further,asimpleanalyticalexpressionofthebreakdownvoltageisobtained,whichoffersaneffectivewaytogainanoptimalhighvoltage.Alltheanalyticalresultsareingoodagreementwiththesimulationresults.

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A new analytical model for the surface electric field distribution and breakdown voltage of the SOI trench LDMOS

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