Low-noise 1.3μm InAs/GaAs quantum dot laser monolithically grown on silicon

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    摘要 Wereportlow-noise,high-performancesingletransversemode1.3μmInAs/GaAsquantumdotlasersmonolithicallygrownonsilicon(Si)usingmolecularbeamepitaxy.Thefabricatednarrow-ridge-waveguideFabry–Perot(FP)lasershaveachievedaroom-temperaturecontinuous-wave(CW)thresholdcurrentof12.5mAandhighCWtemperaturetoleranceupto90°C.Anultra-lowrelativeintensitynoiseoflessthan-150dB∕Hzismeasuredinthe4–16GHzrange.Usingthislow-noiseSi-basedlaser,wethendemonstrate25.6Gb/sdatatransmissionover13.5kmSMF-28.Theselow-costFPlaserdevicesarepromisingcandidatestoprovidecost-effectivesolutionsforuseinuncooledSiphotonicstransmittersininter/hyperdatacentersandmetropolitandatalinks.
    机构地区 不详
    出处 《光子学研究:英文版》 2018年11期
    关键词 LOW-NOISE 1.3 RIN SILICON
    出版日期 2018年11月21日(中国Betway体育网页登陆平台首次上网日期,不代表论文的发表时间)
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