High-strain InGaAs/GaAs quantum well grown by MOCVD

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    摘要 High-strainInGaAs/GaAsquantumwells(QWs)aregrownbylow-pressuremetal-organicchemicalvapordeposition(LP-MOCVD).Photoluminescence(PL)atroomtemperatureisappliedforevaluationoftheopticalproperty.Theinfluenceofgrowthtemperature,V/IIIratio,andgrowthrateonPLcharacteristicareinvestigated.ItisfoundthatthegrowthtemperatureandV/IIIratiohavestrongeffectsonthepeakwavelengthandPLintensity.Thefull-widthathalf-maximum(FWHM)ofPLpeakincreaseswithhighergrowthrateofInGaAslayer.TheFWHMofthePLpeaklocatedat1039nmis20.1meV,whichgrowsat600°CwithV/IIIratioof42.7andgrowthrateof0.96mm/h.
    机构地区 不详
    出版日期 2014年10月20日(中国Betway体育网页登陆平台首次上网日期,不代表论文的发表时间)
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