Fabrication of Poly—Si TFT by Al—induced Lateral Crystallization at Low Temperature-中国Betway体育网页登陆

摘要 Usinganewlow-temperatureprocess(＜600℃),thepoly-SiTFTwasfabricatedbymetal-inducedlateralcrystallization(MILC).Anultrathinaluminumlayerwasdepositedona-Sifilmandselectivelyformedbyphotolithography.Thefilmswerethenannealedat560℃toobtainlaterallycrystallizedpoly-Sifilm,whichisusedasthechannelareaofaTFT.Thepoly-SiTFTshowedanon/offcurrentratioofhigherthan1×106atadrainvoltageof5V.TheelectricalpropertiesaremuchbetterthanTFTfabricatedbyconventionalcrystallizationat600℃.

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Fabrication of Poly—Si TFT by Al—induced Lateral Crystallization at Low Temperature

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