Photoluminescence Spectra of Disordered and Ordered Ga0.52 In0.48P-中国Betway体育网页登陆

摘要 Temperature-dependenceandexcitation-intensity-dependenceofphotoluminescencespectraforbothdisorderedandorderedGa0.52In0.48Paremeasured.Thedisorderedsampleischaractierizedbyitssinglepcakphotoluminescencespectrumwhichisexcitation-intensity.independentandhasdifferentactivationenergyatdifferenttemperatureregion.Theorderedsampleshowsdoublepeaks,theintensityofthehigh-energypeakhasananomalousincreasefirstlyandquenchesafterwards.Therelativehenomenaarereasonablyexplainedintermsoflatticeorderingandorientationsuperlatticemodel.

1LIU Xiao-bing SHI Xiang-hua. Photoluminescence Spectra of Post-heat-treated Porous Silicon.物理电子学,2002-04.
2薛理辉;贡伟亮. Study on Visible Photoluminescence and Absorption Spectra of Fergusonite Group Minerals.有色金属冶金,2000-01.
3WEIQuan－xiang;NIUZhi－chuan. Surface Morphology and Photoluminescence of 1.3μm Wavelength In（Ga） As／GaAs Quantum Dots.物理电子学,2003-01.
4刘奇;孙长振;何元东;徐浩;于泽军;毛卫国;裴永茂;方岱宁. 基于鼓包法的PbZr0.52Ti0.48O3/Ni薄膜材料力电磁耦合特性测试分析.物理,2017-01.
5ZHANGYonggang LIAizhen. Photoluminescence Evaluation of p and n Type 6H—SiC.物理电子学,1999-01.
6徐明升;张恒;周泉斌;王洪. Effects of p-type Ga N thickness on optical properties of Ga N-based light-emitting diodes.物理电子学,2016-04.
7Yuan-Tsung Chang;Nobuo Shinozaki. Estimation of Ordered Means of Two Normal Distributions with Ordered Variances.基础数学,2012-01.
8李香萍;张宝林;管和松;申人升;彭新村;郑伟;夏晓川;赵旺;董鑫;杜国同. Photoluminescence and X-Ray Photoelectron Spectroscopy of p-Type Phosphorus-Doped ZnO Films Prepared by MOCVD.物理,2009-09.
9Zeshui XU;Jian CHEN. ORDERED WEIGHTED DISTANCE MEASURE.系统科学,2008-04.
10Zhi-quanHu;FengTian. On κ—ordered Graphs Involved Degree Sum.基础数学,2003-01.

Photoluminescence Spectra of Disordered and Ordered Ga0.52 In0.48P

来源期刊

相关推荐

同分类资源更多

相关关键词

Photoluminescence Spectra of Disordered and Ordered Ga0.52 In0.48P

来源期刊

相关推荐

同分类资源 更多

相关关键词

同分类资源更多