Photoluminescence Spectra of Post-heat-treated Porous Silicon

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    摘要 Poroussiliconpreparedbypulseelectro-etchingisheat-treatedinO2atmospherewithanenhancementofitsPLpeakandanimprovementofitsPLstability.ThePLpeakofasampleporoussilicontreatedinO2atmosphereat1000℃presentsitselfathree-peakstructureand,comparedwithanun-heat-treatedsample,thereexistsblueshiftof~40nm.
    机构地区 不详
    出版日期 2002年04月14日(中国Betway体育网页登陆平台首次上网日期,不代表论文的发表时间)
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