摘要
Poroussiliconpreparedbypulseelectro-etchingisheat-treatedinO2atmospherewithanenhancementofitsPLpeakandanimprovementofitsPLstability.ThePLpeakofasampleporoussilicontreatedinO2atmosphereat1000℃presentsitselfathree-peakstructureand,comparedwithanun-heat-treatedsample,thereexistsblueshiftof~40nm.
出版日期
2002年04月14日(中国Betway体育网页登陆平台首次上网日期,不代表论文的发表时间)