摘要
Accordingtothewell-establishedlight-to-electricityconversiontheory,resonantexcitedcarriersinthequantumdotswillrelaxtothegroundstatesandcannotescapefromthequantumdotstoformphotocurrent,whichhavebeenobservedinquantumdotswithoutap–njunctionatanexternalbias.Here,weexperimentallyobservedmorethan88%oftheresonantlyexcitedphotocarriersescapingfromInAsquantumdotsembeddedinashort-circuitedp–njunctiontoformphotocurrent.Thephenomenoncannotbeexplainedbythermionicemission,tunnelingprocess,andintermediate-bandtheories.Anewmechanismissuggestedthatthephotocarriersescapedirectlyfromthequantumdotstoformphotocurrentratherthanrelaxtothegroundstateofquantumdotsinducedbyap–njunction.Thefindingisimportantforunderstandingthelow-dimensionalsemiconductorphysicsandapplicationsinsolarcellsandphotodiodedetectors.
出版日期
2016年09月19日（中国Betway体育网页登陆平台首次上网日期，不代表论文的发表时间）
