Graphene field effect transistor-based terahertz modulator with small operating voltage and low insertion loss-中国Betway体育网页登陆

摘要 Inthiswork,wereportabroadbandterahertzwavemodulatorbasedonatop-gategraphenefieldeffecttransistorwithpolyimideasthegatedielectriconaPETsubstrate.ThetransmissionoftheterahertzwaveismodulatedbycontrollingtheFermilevelofgrapheneviathepolyimideasthetop-gatedielectricmaterialinsteadofthetraditionaldielectricmaterials.Itisfoundthattheterahertzmodulatorcanachieveamodulationdepthof~20.9%withasmalloperatinggatevoltageof3.5Vandalowinsertionlossof2.1dB.

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Graphene field effect transistor-based terahertz modulator with small operating voltage and low insertion loss

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