摘要
TernarymetalchalcogenidesemiconductorAg8SnS6,whichisanefficientphotocatalystundervisiblelightradiation,isstudiedbyplane-wavepseudopotentialdensityfunctionaltheory.Aftergeometryoptimization,theelectronicandopticalpropertiesarestudied.Ascissoroperatorvalueof0.81eVisintroducedtoovercometheunderestimationofthecalculationbandgaps.Thecontributionofdifferentbandsisanalyzedbyvirtueoftotalandpartialdensityofstates.Furthermore,inordertounderstandtheopticalpropertiesofAg8SnS6,thedielectricfunction,absorptioncoefficient,andrefractiveindexarealsoperformedintheenergyrangefrom0to11eV.TheabsorptionspectrumindicatesthatAg8SnS6hasagoodabsorbencyinvisiblelightarea.Surfaceenergiesandworkfunctionsof(411),(413),(211),and(112)orientationshavebeencalculated.TheseresultsrevealthereasonforanoutstandingphotocatalyticactivityofAg8SnS6.
出版日期
2015年01月11日(中国Betway体育网页登陆平台首次上网日期,不代表论文的发表时间)