Study and Evaluation in CMOS Full Adders

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    摘要 Lowpoweraddercircuits,SERF,10T-Ⅰ,10T-Ⅱ,10T-Ⅲandacomplementaryadder(28T)atphysicallayoutlevelareevaluated.Simulationsbasedontheextractedaddercircuitlayoutsareruntoassesshowvariouscircuitsetupscanimpactthespeedandpowerconsumption.Inaddition,impactsofoutputinvertersonthecircuitperformanceofmodifiedSERFand10Taddersduetothresholdlossproblemarealsoexamined.Differencesamongtheseaddersareaddressedandapplicationsoftheseaddersaresuggested.
    机构地区 不详
    出版日期 2003年01月11日(中国Betway体育网页登陆平台首次上网日期,不代表论文的发表时间)
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