Simulation and Analysis of Photo—charge Transfer Characteristics of Bipolar Junction Photogate Transistor for CMOS Imagers-中国Betway体育网页登陆

摘要 Theprincipleofthetwocarrierscontributingtocarrythepixelsignalchargesisfirstlypresented,andthenthebipolarjunctionphotogatetransistor(BJPT)withhighperformanceisproposedfortheCMOSimagesensor.Thenumericalanalyticalmodelofthephoto-chargetransferforthebipolarjunctionphotogateisestablishedindetail.Somenumericalsimulationsareobtainedunder0.6μmCMOSprocess,whichshowthatitsreadoutrateincreasesexponentiallywiththeincreaseofthephoto-chargeatappliedvoltage.

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Simulation and Analysis of Photo—charge Transfer Characteristics of Bipolar Junction Photogate Transistor for CMOS Imagers

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