摘要
Monolithicwhite-light-emittingdiodes（whiteLEDs）withoutphosphorsaredemonstratedusingInGaN/GaNmultiplequantumwells（MQWs）grownonGaNmicroringsformedbyselectiveareaepitaxyonSiO2maskpatterns.Themicroringstructureiscomposedof{1-101}semi-polarfacetsanda（0001）c-plane,attributedtofavorablesurfacepolarityandsurfaceenergy.ThewhitelightisrealizedbycombiningshortandlongwavelengthsofelectroluminescenceemissionsfromInGaN/GaNMQWsonthe{1-101}semi-polarfacetsandthe（0001）c-plane,respectively.ThechangeintheemissionwavelengthsfromeachmicrofacetisduetotheIncompositionvariationsoftheMQWs.Theseresultssuggestthatwhiteemissioncanpossiblybeobtainedwithoutusingphosphorsbycombiningemissionlightfrommicrostructures.
出版日期
2016年01月11日（中国Betway体育网页登陆平台首次上网日期，不代表论文的发表时间）
