Near-infrared metal-semiconductor-metal photodetector based on semi-insulating GaAs and interdigital electrodes

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    摘要 Metal-semiconductor-metalphotodetectorsonsemi-insulatingGaAswithinterdigitalelectrodesshowedsignificantenhancementinthespectralresponseinthenear-infraredregionastheelectrodespacingisreduced.Thephotocurrentforthedevicewith5μminterdigitalspacingisfiveordersofmagnitudehigherthanthedarkcurrent,andtheroomtemperaturedetectivityisontheorderof2.4×1012cmHz1∕2W-1at5Vbias.Furthermore,thespectralresponseofthisdevicepossessesstrongdependenceonthepolarizationofincidentlightshowingpotentialplasmoniceffectswithonlymicroscaledimensions.Theseexperimentaldatawereanalyzedusingopticalsimulationtoconfirmtheresponseofthedevices.
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    出版日期 2015年01月11日(中国Betway体育网页登陆平台首次上网日期,不代表论文的发表时间)
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