Novel deep—submicron x—ray lithography process for T—shaped gate patterns-中国Betway体育网页登陆

摘要 ThegrowinginterestintheuseofGalliumArsenidssemiconductormaterialshaspresentedmanyopportunitiesfordeviceoperationalspeedimprovementsbuthasalsopresentedmanyproblemsforthedevicemaker,Anoveldeep-submicronx-raylithographyprocessforT-shapedgatepatternsusefulforhigh-electron-mobilitytransistors(HEMT)isintroducedinthiswork.InthefabricationofT-shapedgateatherrlayerresistsmethodisused.Thex-rayexposureexperimentswerefinishedbyBeijingSynchrotronRadiationFacility(BSRF)3B1Abeamline,andgoodresulthasbeenobtained.

1秦海燕;李璇;申溯.Novel optical lithography using silver superlens.光学工程,2008-02.
2Jiangwu Deng.A CLASS OF SPECTRALLY ARBITRARY RAY PATTERNS.基础数学,2017-03.
3RongZhongYUAN ZuoLongYU MeiZhenQU.Novel Gel—like Process for Synthesizing Submicron LiaNi0.8Co0.2O2 Powders Used in Lithium Ion Batteries.化学,2003-07.
4Ding Nan Wu Xin He Jinpeng Li Wenjian Wang Jufang Zhou Guangming.3 - 92 Detection of Novel Human miRNAs in HeLa Cells after X-ray Irradiation.物理,2010-01.
5毛姗姗;李艳秋;姜家华;沈诗欢;刘克;郑猛.Design of a hyper-numerical-aperture deep ultraviolet lithography objective with freeform surfaces.光学工程,2018-03.
6Yong-Bo Liao Wen-Chang Li Ping Li Ai-Wu Ruan.Novel Test Approach for Interconnect Resources in Field Programmable Gate Arrays.物理电子学,2011-01.
7CHEN Min XIA Xiao-min.The Features and Patterns of Revision Process in English Learners＇ Writing.英语,2013-01.
8Dongxue Chen;Qian Liu.A novel hanging bowl-shaped mask for the fabrication of vertical sidewall structures.物理,2016-01.
9Bojing Zhu;David A. Yuen;Yaolin Shi;Huihong Cheng.Submicron Volume Roughness ＆ Asperity Contact Friction Model for Principle Slip Surface in Flash Heating Process.地质学,2015-01.
10.Study on Eogene Basalts: Implication of the Deep Process over the Bohaiwan Basin Evolution.地质学,1997-01.

Novel deep—submicron x—ray lithography process for T—shaped gate patterns

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