摘要
Bariumferrite（BaM）thinfilmsaredepositedonplatinumcoatedsiliconwafersbypulsedlaserdeposition（PLD）.Theeffectsofdepositionsubstratetemperatureonthemicrostructure,magneticandmicrowavepropertiesofBaMthinfilmsareinvestigatedindetail.Itisfoundthatmicrostructure,magneticandmicrowavepropertiesofBaMthinfilmareverysensitivetodepositionsubstratetemperature,andexcellentBaMthinfilmisobtainedwhendepositiontemperatureis910℃andoxygenpressureis300mTorr（1Torr=1.3332×102Pa）.X-raydiffractionpatternsandatomicforcemicroscopyimagesshowthatthebestthinfilmhasperpendicularorientationandhexagonalmorphology,andthecrystallographicalignmentdegreecanbecalculatedtobe0.94.Hysteresisloopsrevealthatthesquarenessratio（Mr/Ms）isashighas0.93,thesaturatedmagnetizationis4004Gs（1Gs=104T）,andtheanisotropyfieldis16.5kOe(1Oe=79.5775A·m-1).Ferromagneticresonancemeasurementsrevealthatthegyromagneticratiois2.8GHz/kOe,andtheferromagneticresonancelinewithis108Oeat50GHz,whichmeansthatthisthinfilmhaslowmicrowaveloss.ThesepropertiesmaketheBaMthinfilmshavepotentialapplicationsinmicrowavedevices.
出版日期
2016年06月16日（中国Betway体育网页登陆平台首次上网日期，不代表论文的发表时间）
