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《半导体光子学与技术:英文版》
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1996年4期
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Silicon Photodiode with Very Small Sensitive Area
Silicon Photodiode with Very Small Sensitive Area
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摘要
SiliconPhotodiodewithVerySmalSensitiveArea①YINChangsong,LIXiaojun(WuhanUniversity,Wuhan430072,CHN)Abstract:ThesiliconPNjuncti...
DOI
0dp6wqwxj2/1563693
作者
机构地区
不详
出处
《半导体光子学与技术:英文版》
1996年4期
关键词
PHOTODIODE
PHOTOELECTRIC
CONVERSION
PN
JUNCTION
分类
[电子电信][物理电子学]
出版日期
1996年04月14日(中国Betway体育网页登陆平台首次上网日期,不代表论文的发表时间)
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来源期刊
半导体光子学与技术:英文版
1996年4期
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相关关键词
PHOTODIODE
PHOTOELECTRIC
CONVERSION
PN
JUNCTION
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