首页
期刊导航
期刊检索
论文检索
新闻中心
期刊
期刊
论文
首页
>
《材料科学前沿:英文版》
>
2015年2期
>
GaN metal-oxide-semiconductor field-effect transistors on AIGaN/GaN heterostructure with recessed gate
GaN metal-oxide-semiconductor field-effect transistors on AIGaN/GaN heterostructure with recessed gate
打印
分享
在线阅读
下载PDF
导出详情
摘要
未填写
DOI
g4qn8gpn48/1515724
作者
Qingpeng WANG;Jin-Ping AO;Pangpang WANG;Ying JIANG;Liuan LI;Kazuya KAWAHARADA;Yang LIU
机构地区
不详
出处
《材料科学前沿:英文版》
2015年2期
关键词
金属氧化物半导体场效应晶体管
ALGAN
氮化镓
异质结
MOSFET
沟道迁移率
分类
[一般工业技术][材料科学与工程]
出版日期
2015年02月12日(中国Betway体育网页登陆平台首次上网日期,不代表论文的发表时间)
相关文献
1
王德宁;顾聪;王尉源.
ANALYTICAL RESEARCH ON THE STATIC CHARACTERISTICS OF HETEROSTRUCTURE ISOLATED GATE FIELD-EFFECT TRANSISTORS
.物理电子学,1992-02.
2
杨铭;林兆军;赵景涛;王玉堂;李志远;吕元杰;冯志红.
Improvement of switching characteristics by substrate bias in AlGaN/AlN/GaN heterostructure field effect transistors
.物理,2015-11.
3
DONG Mao-jun;TAO Chun-lan;ZHANG Xu-hui;OU Gu-plng;ZHANG Fu-jia.
Fabrication of pentacene organic field-effect transistors With polyimide gate dielectric layer
.物理电子学,2007-06.
4
JIANG Kai-Ming ZHENG Zhi-Ming XING Ding-Yu.
Conductance Oscillations in Spin Field-Effect Transistors
.物理,2006-04.
5
KAPIL DEBNATH;DAVID J. THOMSON;WEIWEI ZHANG;ALI Z. KHOKHAR;CALLUM LITTLEJOHNS;JAMES BYERS;LORENZO MASTRONARDI;MUHAMMAD K. HUSAIN;KOUTA IBUKURO;FREOERIC Y. GARDES;GRAHAM T, REED;SHINICHI SAITO.
All-silicon carrier accumulation modulator based on a lateral metal-oxide-semiconductor capacitor
.物理,2018-05.
6
薛俊俊;陈敦军;刘斌;谢自力;江若琏;张荣;郑有炓.
Au/Pt/InGaN/GaN Heterostructure Schottky Prototype Solar Cell
.物理,2009-09.
7
Elaheh Pousaneh;Andrea Preuβ;Khaybar Assim;Tobias Rüffer;Marcus Korb;Jana Tittmann-Otto;Sascha Hermann;Stefan E.Schulz;Heinrich Lang.
Tetranuclear yttrium and gadolinium 2-acetylcyclopentanoate clusters:Synthesis and their use as spin-coating precursors for metal oxide film formation for field-effect transistor fabrication
.有色金属冶金,2018-10.
8
KYUNG ROCK SON;BYEONG RYONG LEE;MIN HO JANG;HYUN CHUL PARK;YONG HOON CHO;AND TAE GEUN KIM.
Enhanced light emission from AIGaN/GaN multiple quantum wells using the localized surface plasmon effect by aluminum nanoring patterns
.物理,2018-01.
9
Sunil Jagannath PATIL;Arun Vithal PATIL;Chandrakant Govindrao DIGHAVKAR;Kashinath Shravan THAKARE;Ratan Yadav BORASE;Sachin Jayaram NANDRE;Nishad Gopal DESHPANDE;Rajendra Ramdas AHIRE.
Semiconductor metal oxide compounds based gas sensors: A literature review
.材料科学与工程,2015-01.
10
Xiao-Na WANG;Ping-An HU.
Carbon nanomaterials: controlled growth and field-effect transistor biosensors
.材料科学与工程,2012-01.
来源期刊
材料科学前沿:英文版
2015年2期
相关推荐
Influence of the quantum-confined Stark effect on the temperature-induced photoluminescence blueshift of In GaN/GaN quantum wells in laser diode structures
Effect of Metal Oxide on Electrical Resistivity of Conductive Wood Charcoal
Numerical Study on a Lateral Double-Gate Tunnelling Field Effect Transistor
Linear dipole behavior of single quantum dots encased in metal oxide semiconductor nanoparticles films
Intrinsic Limits of Electron Mobility in Modulation-Doped AIGaN/GaN 2D Electron Gas by Phonon Scattering
同分类资源
更多
[材料科学与工程]
科聚亚提高溴系阻燃剂价格
[材料科学与工程]
Change of Electrochemical Property of Reinforced Concrete after Electrochemical Chloride Extraction
[材料科学与工程]
民科公司计划于2009年采掘银矿
[材料科学与工程]
油相和水相的比例对反相微乳液法制备钡铁氧体磁学性能的影响
[材料科学与工程]
Synthesis of Poly (3-acetylpyrrolyl methine) with Azobenzene Side Groups and Study on Its Third-order Nonlinear Optical Property
相关关键词
金属氧化物半导体场效应晶体管
ALGAN
氮化镓
异质结
MOSFET
沟道迁移率
返回顶部
map