摘要
Amultilevelgratingcouplerbasedonsilicon-on-insulator(SOI)materialstructureisproposedtorealizethecouplingbetweenwaveguideandwaveguideorwaveguideandfiber.Thiscoupleriscompatiblewiththecurrentfabricationfacilitiesforcomplementarymetaloxidesemiconductor(CMOS)technologywithverticalcoupling.Thisstructurecanrealizecouplingwhenthebeamswithtransverseelectric(TE)polarizationandtransversemagnetic(TM)polarizationareincidentatthesametime.Theinfluencesofthegratingcouplerparametersincludingwavelength,thethicknessofwaveguidelayer,thethicknessofSiO2layerandthenumberofstepsontheTEmodeandTMmodecouplingefficienciesarediscussed.Theoryresearchesandsimulationresultsindicatethatthewavelengthrangeisfrom1533nmto1580nmwhentheTEmodeandTMmodecouplingefficienciesarebothmorethan40%asthegratingperiodis0.99μm.ThecouplingefficienciesoftheincidentTEandTMmodesare49.9%and49.5%atthewavelengthof1565nm,respectively,andthedifferencebetweenthemisonly0.4%.
出版日期
2013年02月12日（中国Betway体育网页登陆平台首次上网日期，不代表论文的发表时间）
